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2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
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2 097 152 words by 32-Bit organization (alternative 4 194 304 words by 16-Bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V ( 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS - 88 mW standby TTL - 176 mW standby
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CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin double-sided Single in-Line Memory Module with 25.4 mm (1000 mil) height Utilizes sixteen 1M x 4 DRAMs in 300 mil SOJ packages 1024 refresh cycles / 16 ms Tin-Lead contact pads (S - version) Gold contact pads (GS - version)
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Ordering Information Type HYM 322160S-60 HYM 322160S-70 HYM 322160GS-60 HYM 322160GS-70 Ordering Code Q67100-Q2014 Q67100-Q2015 Q67100-Q2016 Q67100-Q2017 Package L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns)
Semiconductor Group
551
09.94
HYM 322160S/GS-60/-70 2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 F ceramic decoupling capacitors on a PC board. The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, ..., DQ15 and DQ31, respectively. Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions Pin No. A0-A9 DQ0-DQ31 CAS0 - CAS3 RAS0 - RAS3 WE Function Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection
VCC VSS
PD N.C.
Presence Detect Pins -60 PD0 PD1 PD2 PD3 N.C. N.C. N.C. N.C. -70 N.C. N.C.
VSS
N.C.
Semiconductor Group
552
HYM 322160S/GS-60/-70 2M x 32-Bit
Pin Configuration (top view)
Semiconductor Group
553
HYM 322160S/GS-60/-70 2M x 32-Bit
Block Diagram
Semiconductor Group
554
HYM 322160S/GS-60/-70 2M x 32-Bit
Absolute Maximum Ratings Operation temperature range ......................................................................................... 0 to + 70 C Storage temperature range......................................................................................... - 55 to 125 C Soldering temperature ............................................................................................................ 260 C Soldering time ............................................................................................................................. 10 s Input/output voltage ........................................................................................................ - 1 to + 7 V Power supply voltage...................................................................................................... - 1 to + 7 V Power dissipation..................................................................................................................... 6.2 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC Characteristics1) TA = 0 to 70 C, VCC = 5 V 10 % Parameter Input high voltage Input low voltage Output high voltage (IOUT = - 5 mA) Output low voltage (IOUT = 4.2 mA) Input leakage current (0 V < VIN < 6.5 V, all other pins = 0 V) Output leakage current (DO is disabled, 0 V < VOUT < 5.5 V) Symbol Limit Values min. max. 5.5 0.8 - 0.4 20 20 V V V V A A 2.4 - 1.0 2.4 - - 20 - 20 Unit Test Condition
VIH VIL VOH VOL II(L) IO(L)
ICC1 Average VCC supply current (RAS, CAS, address cycling, tRC = tRC min) -60 version -70 version
Standby VCC supply current (RAS = CAS = VIH)
- - -
880 800 32
mA mA mA
2) 3)
,
ICC2
Average VCC supply current ICC3 during RAS only refresh cycles (RAS cycling, CAS = VIH, tRC = tRC min) -60 version -70 version
- -
880 800
mA mA
2)
Semiconductor Group
555
HYM 322160S/GS-60/-70 2M x 32-Bit
DC Characteristics1) (cont'd) Parameter Symbol Limit Values min. Average VCC supply current ICC4 during fast page mode (RAS = VIL, CAS, address cycling, tPC = tPC min) -60 version -70 version Standby VCC supply current (RAS = CAS = VCC - 0.2 V) max. Unit Test Condition
- - -
560 560 16
mA mA mA
2) 3)
,
ICC5
Average VCC supply current ICC6 during CAS-before-RAS refresh mode (RAS, CAS cycling, tRC = tRC min) -60 version -70 version
- -
880 800
mA mA
2)
Capacitance TA = 0 to 70 C, VCC = 5 V 10 %, f = 1 MHz Parameter Input capacitance (A0 to A9, WE) Input capacitance (RAS0-RAS2, CAS0-CAS3) I/O capacitance (DQ0-DQ31) Symbol Limit Values min. max. 120 40 29 pF pF pF - - - Unit
CI1 CI2 CIO1
Semiconductor Group
556
HYM 322160S/GS-60/-70 2M x 32-Bit
AC Characteristics 4) 5) TA = 0 to 70 C, VCC = 5 V 10 %, tT = 5 ns Parameter Symbol Limit Values HYM 322160S/GS-60 min. Random read or write cycle time Fast page mode cycle time Access time from RAS Access time from CAS Access time from column address Access time from CAS precharge CAS to output in low-Z Output buffer turn-off delay Transition time (rise and fall) RAS precharge time RAS pulse width RAS pulse width
(fast page mode)
6) 11) 12) 6) 11)
Unit
HYM 322160S/GS-70 min. 130 45 - - - - 0 0 3 50 70 70 40 20 70 20 20 15 5 10 0 10 0 15 max. - - 70 20 35 40 - 20 50 - 10000 200000 - - - 10000 50 35 - - - - - - ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
max. - - 60 15 30 35 - 20 50 - 10000 200000 - - - 10000 45 30 - - - - - -
tRC tPC tRAC tCAC tAA
110 40 - - - - 0 0 3 40 60 60 35 15 60 15 20 15 5 10 0 10 0 15
6) 12)
tCPA
6) 6) 7) 5)
tCLZ tOFF tT tRP tRAS tRASP tRHCP tRSH tCSH tCAS
CAS precharge to RAS delay RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS precharge time CAS precharge time (fast page mode) Row address setup time Row address hold time Column address setup time Column address hold time
11)
tRCD tRAD
12)
tCRP tCP tASR tRAH tASC tCAH
Semiconductor Group
557
HYM 322160S/GS-60/-70 2M x 32-Bit
AC Characteristics4) 5) (cont'd) TA = 0 to 70 C, VCC = 5 V 10 %, tT = 5 ns Parameter Symbol Limit Values HYM 322160S/GS-60 min. Column address to RAS lead time tRAL Read command setup time Read command hold time Read command hold time ref. to RAS Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data setup time Data hold time Refresh period Write command setup time CAS setup time CAS hold time RAS to CAS precharge time CAS precharge time Write to RAS precharge time Write hold time ref. to RAS
13) 13) 10) 13) 13) 9) 9) 8)
Unit
HYM 322160S/GS-70 min. 35 0 0 0 15 15 20 20 0 15 - 0 5 15 0 10 10 10 max. - - - - - - - - - - 16 - - - - - - - ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns ns ns
max. - - - - - - - - - - 16 - - - - - - -
30 0 0 0 10 10 15 15 0 15 - 0 5 15 0 10 10 10
tRCS tRCH tRRH
8)
tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCP tWRP tWRH
Semiconductor Group
558
HYM 322160S/GS-60/-70 2M x 32-Bit
Notes:
1) All voltages are referenced to VSS . 2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open. 4) An initial pause of 200 s is required after power-up followed by 8 RAS cycles out of which at least one cycle has to be a refresh cycle before proper device operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 5) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also measured between VIH and VIL . 6) Measured with a load equivalant of 2 TTL loads and 100 pF. 7) tOFF (max.) defines the time at which the output achieves the open-circuit condition and is not referenced to output voltage levels. 8) Either tRCH or tRRH must be satisfied for a read cycle. 9) These parameters are referenced to the CAS leading edge. 10) tWCS is not a restrictive operating parameter. This is included in the data sheet as electrical characteristic only. If tWCS > tWCS (min.), the cycle is an early write cycle and data out pin will remain open circuit (high impedance). 11) Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC . 12) Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA . 13)For CAS-before-RAS cycles only.
Semiconductor Group
559

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